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Image of Infineon Technologies IRF8313PBF-GURT MOSFET 1 N-channel 2.0 W SO 8
 

Infineon Technologies IRF8313PBF-GURT MOSFET 1 N-channel 2.0 W SO 8

Cut-off voltage U(DSS): 30 V; Enclosure type (semiconductors): SO 8; I(d): 9.7 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 2.0 W; R(DS)(on): 0.0155 Ω; Type (transistors): N-channel


 
Image of Infineon Technologies IRF8736PBF-GURT MOSFET 1 N-channel 2.5 W SO 8
 

Infineon Technologies IRF8736PBF-GURT MOSFET 1 N-channel 2.5 W SO 8

Cut-off voltage U(DSS): 30 V; Enclosure type (semiconductors): SO 8; I(d): 18 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 2.5 W; R(DS)(on): 0.0048 Ω; Type (transistors): N-channel


 
Image of Infineon Technologies IRF9530NPBF MOSFET 1 P-channel 79 W TO 220
 

Infineon Technologies IRF9530NPBF MOSFET 1 P-channel 79 W TO 220

C(ISS): 760 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): TO 220; I(d): 14 A; Manufacturer code (components): INF; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): +175...


 
Image of Infineon Technologies IRF9530NSPBF-GURT MOSFET 1 P-channel 79 W D2PAK
 

Infineon Technologies IRF9530NSPBF-GURT MOSFET 1 P-channel 79 W D2PAK

Cut-off voltage U(DSS): -100 V; Enclosure type (semiconductors): D2PAK; I(d): -14 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 79 W; R(DS)(on): 0.2 Ω; Type (transistors): P-channel


 
Image of Infineon Technologies IRF9540NPBF MOSFET 1 P-channel 140 W TO 220
 

Infineon Technologies IRF9540NPBF MOSFET 1 P-channel 140 W TO 220

C(ISS): 1300 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): TO 220; I(d): 23 A; Manufacturer code (components): INF; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): +150...


 
Image of Infineon Technologies IRF9540NSPBF-GURT MOSFET 1 P-channel 110 W D2PAK
 

Infineon Technologies IRF9540NSPBF-GURT MOSFET 1 P-channel 110 W D2PAK

Cut-off voltage U(DSS): -100 V; Enclosure type (semiconductors): D2PAK; I(d): -23 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 110 W; R(DS)(on): 0.117 Ω; Type (transistors): P-channel


 
Image of Infineon Technologies IRF9Z24NPBF MOSFET 1 P-channel 45 W TO 220AB
 

Infineon Technologies IRF9Z24NPBF MOSFET 1 P-channel 45 W TO 220AB

C(ISS): 350 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 55 V; Enclosure type (semiconductors): TO 220AB; I(d): 12 A; Manufacturer code (components): INF; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): +175...


 
Image of Infineon Technologies IRF9Z34N MOSFET 1 P-channel 3.8 W TO 220
 

Infineon Technologies IRF9Z34N MOSFET 1 P-channel 3.8 W TO 220

C(ISS): 620 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 55 V; Enclosure type (semiconductors): TO 220; I(d): 19 A; Manufacturer code (components): INF; Mounting type: Surface-mount; No. of channels: 1; Operating temperature (max.): +175...


 
Image of Infineon Technologies IRF9Z34NPBF MOSFET 1 P-channel 68 W TO 220AB
 

Infineon Technologies IRF9Z34NPBF MOSFET 1 P-channel 68 W TO 220AB

Cut-off voltage U(DSS): -55 V; Enclosure type (semiconductors): TO 220AB; I(d): -19 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 68 W; R(DS)(on): 0.1 Ω; Type (transistors): P-channel


 
Image of Infineon Technologies IRF9Z34NSPBF-GURT MOSFET 1 P-channel 68 W D2PAK
 

Infineon Technologies IRF9Z34NSPBF-GURT MOSFET 1 P-channel 68 W D2PAK

Cut-off voltage U(DSS): -55 V; Enclosure type (semiconductors): D2PAK; I(d): -19 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 68 W; R(DS)(on): 0.1 Ω; Type (transistors): P-channel