Infineon Technologies IRF8313PBF-GURT MOSFET 1 N-channel 2.0 W SO 8

Cut-off voltage U(DSS): 30 V; Enclosure type (semiconductors): SO 8; I(d): 9.7 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 2.0 W; R(DS)(on): 0.0155 Ω; Type (transistors): N-channel

Price: 0.94 from Conrad Electronic