Infineon Technologies IRF9Z34N MOSFET 1 P-channel 3.8 W TO 220

C(ISS): 620 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 55 V; Enclosure type (semiconductors): TO 220; I(d): 19 A; Manufacturer code (components): INF; Mounting type: Surface-mount; No. of channels: 1; Operating temperature (max.): +175 °C; Operating temperature (min.) (num): -55 °C; Power (max) P(TOT): 3.8 W; Q(G): 35 nC; Q(G) reference voltage: 10 V; R(DS)(on): 100 mΩ; R(DS)(on) reference current: 10 A; R(DS)(on) reference voltage: 10 V; Series (semiconductors): HEXFET®; Transistor property: Standard; Type (transistors): P-channel ; U(DSS): 55 V; U(GS)(th) max.: 4 V; U(GS)(th) reference current (max.): 250 µA

Price: 0.87 from Conrad Electronic