ON Semiconductor Transistor (BJT) - Discrete BC847CLT1G SOT 23 NPN Tape on Full reel
Collector current: 0.1 A; Collector emitter voltage U(CEO): 45 V; DC current gain hFE - reference current: 420 µA; Enclosure type (semiconductors): SOT 23; Mounting type: Surface-mount; Packaging type (components): Tape on Full reel; Power (max) P(TOT):...
ON Semiconductor Transistor (BJT) - Discrete BC848CLT1G SOT 23 NPN Tape on Full reel
Collector current: 0.1 A; Collector emitter voltage U(CEO): 30 V; DC current gain hFE - reference current: 420 µA; Enclosure type (semiconductors): SOT 23; Mounting type: Surface-mount; Packaging type (components): Tape on Full reel; Power (max) P(TOT):...
ON Semiconductor Transistor (BJT) - Discrete BC850CLT1G SOT 23 NPN Tape on Full reel
Collector current: 0.1 A; Collector emitter voltage U(CEO): 45 V; DC current gain hFE - reference current: 420 µA; Enclosure type (semiconductors): SOT 23; Mounting type: Surface-mount; Packaging type (components): Tape on Full reel; Power (max) P(TOT):...
ON Semiconductor Transistor (BJT) - Discrete BC856BLT1G SOT 23 PNP Tape on Full reel
Collector current: -0.1 A; Collector emitter voltage U(CEO): -65 V; DC current gain hFE - reference current: 220 µA; Enclosure type (semiconductors): SOT 23; Mounting type: Surface-mount; Packaging type (components): Tape on Full reel; Power (max) P(TOT):...
ON Semiconductor Transistor (BJT) - Discrete BCP53-16T1G SOT 223 PNP Tape on Full reel
Collector current: 1.5 A; Collector emitter voltage U(CEO): -80 V; DC current gain hFE - reference current: 100 µA; Enclosure type (semiconductors): SOT 223; Mounting type: Surface-mount; Packaging type (components): Tape on Full reel; Power (max) P(TOT):...
ON Semiconductor Transistor (BJT) - Discrete BCP56-16T1G SOT 223 NPN Tape on Full reel
Collector current: 1 A; Collector emitter voltage U(CEO): 80 V; DC current gain hFE - reference current: 100 µA; Enclosure type (semiconductors): SOT 223; Mounting type: Surface-mount; Packaging type (components): Tape on Full reel; Power (max) P(TOT):...
ON Semiconductor Transistor (BJT) - Discrete BCV27 SOT 23-3 No. of channels 1 NPN - Darlington
Collector current: 1.2 A; Collector cutoff current: 100 nA; Collector emitter voltage U(CEO): 30 V; Collector-emitter saturation voltage (max.): 1 V; DC current gain (hFE): 20000; DC current gain hFE - reference current: 100 mA; DC current gain hFE -...
ON Semiconductor Transistor (BJT) - Discrete BD13510STU TO 126 No. of channels 1 NPN
Collector current: 1.5 A; Collector cutoff current: 100 nA; Collector emitter voltage U(CEO): 45 V; Collector-emitter saturation voltage (max.): 500 mV; DC current gain (hFE): 63; DC current gain hFE - reference current: 150 mA; DC current gain hFE -...
ON Semiconductor Transistor (BJT) - Discrete BD13616STU TO 126 No. of channels 1 PNP
Collector current: -1.5 A; Collector cutoff current: -100 nA; Collector emitter voltage U(CEO): -45 V; Collector-emitter saturation voltage (max.): -500 mV; DC current gain (hFE): 100; DC current gain hFE - reference current: -150 mA; DC current gain...
ON Semiconductor Transistor (BJT) - Discrete BD13716STU TO 126 3 No. of channels 1 NPN
Collector current: 1.5 A; Collector cutoff current: 100 nA; Collector emitter voltage U(CEO): 60 V; Collector-emitter saturation voltage (max.): 500 mV; DC current gain (hFE): 100; DC current gain hFE - reference current: 150 mA; DC current gain hFE -...