ON Semiconductor Transistor (BJT) - Discrete BCV27 SOT 23-3 No. of channels 1 NPN - Darlington

Collector current: 1.2 A; Collector cutoff current: 100 nA; Collector emitter voltage U(CEO): 30 V; Collector-emitter saturation voltage (max.): 1 V; DC current gain (hFE): 20000; DC current gain hFE - reference current: 100 mA; DC current gain hFE - reference voltage: 5 V; Enclosure type (semiconductors): SOT 23-3; Manufacturer code (components): OnS; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 350 mW; Transit frequency f(T): 220 MHz; Type (transistors): NPN - Darlington

Price: 0.15 from Conrad Electronic