Breakdown voltage U(BR): 44.7 V; Enclosure type (semiconductors): DO 201; Manufacturer code (components): DIO; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): +175 °C; Operating temperature (min.) (num): -50 °C; Peak current...
Breakdown voltage U(BR): 86.10 V; Enclosure type (semiconductors): D5.4x7.5; Mounting type: Through-hole mounting; Reverse voltage U(R): 70.1 V
Breakdown voltage U(BR): 504 V; Enclosure type (semiconductors): DO 214AB; Mounting type: Surface-mount; Reverse voltage U(R): 408 V
Breakdown voltage U(BR): 29.60 V; Enclosure type (semiconductors): DO 214AB; Mounting type: Surface-mount; Reverse voltage U(R): 24 V
Breakdown voltage U(BR): 8.70 V; Enclosure type (semiconductors): DO 214AB; Mounting type: Surface-mount; Reverse voltage U(R): 7 V
Breakdown voltage U(BR): 40.70 V; Enclosure type (semiconductors): DO 214AB; Mounting type: Surface-mount; Reverse voltage U(R): 33 V
Breakdown voltage U(BR): 26.90 V; Enclosure type (semiconductors): DO 214AB; Mounting type: Surface-mount; Reverse voltage U(R): 22 V
Additional technical information: Type AxialHousing: D8x7.5Termination of voltage - VBRmin 122.00 VVBRmax 140.50 VIt 5 mAPulse power loss - PPPM 5000 WJunction temperature - Tjmax 175 °CReverse voltage - VWM 110.0 VMaximum reverse current ID @ VWM: 10,000...
Additional technical information: Type AxialHousing: D8x7.5Termination of voltage - VBRmin 15.60 VVBRmax 19.80 VIt 5 mAPulse power loss - PPPM 5000 WJunction temperature - Tjmax 175 °CReverse voltage - VWM 14.0 VMaximum reverse current ID @ VWM: 10,000...
Additional technical information: Type AxialHousing: D8x7.5Termination of voltage - VBRmin 16.70 VVBRmax 19.20 VIt 5 mAPulse power loss - PPPM 5000 WJunction temperature - Tjmax 175 °CReverse voltage - VWM 15.0 VMaximum reverse current ID @ VWM: 10,000...