Additional technical information: Type SMDHOUSING: DO-214AA/SMBTermination of voltage - VBRmin 6.40 VVBRmax 7.00 VIt 10 mAPulse power loss - PPPM 1000 WJunction temperature - Tjmax 150 °CReverse voltage - VWM 5.0 VMaximum reverse current ID @ VWM: 800,000...
Additional technical information: Type AxialHousing: D5.4x7.5Termination of voltage - VBRmin 9.50 VVBRmax 10.50 VIt 1 mAPulse power loss - PPPM 1500 WJunction temperature - Tjmax 175 °CReverse voltage - VWM 8.5 VMaximum reverse current ID @ VWM: 10,000...
Additional technical information: Type AxialHousing: D5.4x7.5Termination of voltage - VBRmin 114.00 VVBRmax 126.00 VIt 1 mAPulse power loss - PPPM 1500 WJunction temperature - Tjmax 175 °CReverse voltage - VWM 102.0 VMaximum reverse current ID @ VWM:...
Additional technical information: Type AxialHousing: D5.4x7.5Termination of voltage - VBRmin 14.30 VVBRmax 15.80 VIt 1 mAPulse power loss - PPPM 1500 WJunction temperature - Tjmax 175 °CReverse voltage - VWM 12.8 VMaximum reverse current ID @ VWM: 5,000...
Additional technical information: Type AxialHousing: D5.4x7.5Termination of voltage - VBRmin 190.00 VVBRmax 210.00 VIt 1 mAPulse power loss - PPPM 1500 WJunction temperature - Tjmax 175 °CReverse voltage - VWM 171.0 VMaximum reverse current ID @ VWM:...
Breakdown voltage U(BR): 21 V; Enclosure type (semiconductors): D5.4x7.5; Mounting type: Through-hole mounting; Reverse voltage U(R): 17.1 V
Breakdown voltage U(BR): 231 V; Enclosure type (semiconductors): D5.4x7.5; Mounting type: Through-hole mounting; Reverse voltage U(R): 185 V
Breakdown voltage U(BR): 23.10 V; Enclosure type (semiconductors): D5.4x7.5; Mounting type: Through-hole mounting; Reverse voltage U(R): 18.8 V
Breakdown voltage U(BR): 24.20 V; Enclosure type (semiconductors): D5.4x7.5; Mounting type: Through-hole mounting; Reverse voltage U(R): 17.8 V
Breakdown voltage U(BR): 25.20 V; Enclosure type (semiconductors): D5.4x7.5; Mounting type: Through-hole mounting; Reverse voltage U(R): 20.5 V