Order by: Relevance
Price: Low to High, High to Low

 
Image of Infineon Technologies SGW25N120 IGBT TO247 3 PG single Standard 1200 V
 

Infineon Technologies SGW25N120 IGBT TO247 3 PG single Standard 1200 V

Collector current: 46 A; Collector cutoff current: 350 µA; Collector emitter reverse voltage U(CES): 1200 V; Collector-emitter saturation voltage (max.): 3.6 V; Configuration (transistors): single; Enclosure type (semiconductors): TO247 3 PG; I(CM):...


 
Image of Infineon Technologies SPA08N80C3 MOSFET 1 N-channel 40 W #####TO-220-FULLPAK
 

Infineon Technologies SPA08N80C3 MOSFET 1 N-channel 40 W #####TO-220-FULLPAK

Cut-off voltage U(DSS): 800 V; Enclosure type (semiconductors): TO-220-FULLPAK; I(d): 8 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 40 W; R(DS)(on): 0.65 Ω; Type (transistors): N-channel


 
Image of Infineon Technologies SPP18P06PH MOSFET 1 P-channel 81.1 W TO 220
 

Infineon Technologies SPP18P06PH MOSFET 1 P-channel 81.1 W TO 220

Cut-off voltage U(DSS): -60 V; Enclosure type (semiconductors): TO 220; I(d): -18.70 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 81.1 W; R(DS)(on): 0.13 Ω; Type (transistors): P-channel


 
Image of Infineon Technologies SPP20N60C3 MOSFET 1 N-channel 208 W TO 220
 

Infineon Technologies SPP20N60C3 MOSFET 1 N-channel 208 W TO 220

Cut-off voltage U(DSS): 650 V; Enclosure type (semiconductors): TO 220; I(d): 20.70 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 208 W; R(DS)(on): 0.19 Ω; Type (transistors): N-channel


 
Image of Infineon Technologies SPP20N60S5 MOSFET 1 N-channel 208 W TO 220
 

Infineon Technologies SPP20N60S5 MOSFET 1 N-channel 208 W TO 220

Cut-off voltage U(DSS): 600 V; Enclosure type (semiconductors): TO 220; I(d): 20 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 208 W; R(DS)(on): 0.19 Ω; Type (transistors): N-channel


 
Image of Infineon Technologies SPP80P06PH MOSFET 1 P-channel 340 W TO 220
 

Infineon Technologies SPP80P06PH MOSFET 1 P-channel 340 W TO 220

Cut-off voltage U(DSS): -60 V; Enclosure type (semiconductors): TO 220; I(d): -80 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 340 W; R(DS)(on): 0.023 Ω; Type (transistors): P-channel


 
Image of Infineon Technologies SPW20N60S5 MOSFET 1 N-channel 208 W TO 247
 

Infineon Technologies SPW20N60S5 MOSFET 1 N-channel 208 W TO 247

C(ISS): 3000 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 600 V; Enclosure type (semiconductors): TO 247; I(d): 20 A; Manufacturer code (components): INF; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): +150...


 
Image of Infineon Technologies Standard diode BAL74 SOT 23-3 50 V 250 mA
 

 
Image of Infineon Technologies Standard diode BAS16 SOT 23-3 80 V 250 mA Tape cut
 

 
Image of Infineon Technologies Standard diode BAS21 SOT 23 200 V 250 mA Tape cut