Infineon Technologies IRLR2908PBF-GURT MOSFET 1 N-channel 120 W TO 252AA
Cut-off voltage U(DSS): 80 V; Enclosure type (semiconductors): TO 252AA; I(d): 30 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 120 W; R(DS)(on): 0.03 Ω; Type (transistors): N-channel
Infineon Technologies IRLR3110ZPBF-GURT MOSFET 1 N-channel 140 W TO 252AA
Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): TO 252AA; I(d): 42 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 140 W; R(DS)(on): 0.016 Ω; Type (transistors): N-channel
Infineon Technologies IRLR3410PBF-GURT MOSFET 1 N-channel 79 W TO 252AA
Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): TO 252AA; I(d): 17 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 79 W; R(DS)(on): 0.155 Ω; Type (transistors): N-channel
Infineon Technologies IRLR3636PBF-GURT MOSFET 1 N-channel 143 W TO 252AA
Cut-off voltage U(DSS): 60 V; Enclosure type (semiconductors): TO 252AA; I(d): 50 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 143 W; R(DS)(on): 0.0083 Ω; Type (transistors): N-channel
Infineon Technologies IRLR3705ZPBF-GURT MOSFET 1 N-channel 130 W TO 252AA
Cut-off voltage U(DSS): 55 V; Enclosure type (semiconductors): TO 252AA; I(d): 42 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 130 W; R(DS)(on): 0.012 Ω; Type (transistors): N-channel
Infineon Technologies IRLR8726PBF-GURT MOSFET 1 N-channel 75 W TO 252AA
Cut-off voltage U(DSS): 30 V; Enclosure type (semiconductors): TO 252AA; I(d): 86 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 75 W; R(DS)(on): 0.008 Ω; Type (transistors): N-channel
Infineon Technologies IRLR8743PBF-GURT MOSFET 1 N-channel 135 W TO 252AA
Cut-off voltage U(DSS): 30 V; Enclosure type (semiconductors): TO 252AA; I(d): 160 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 135 W; R(DS)(on): 0.0039 Ω; Type (transistors): N-channel
Infineon Technologies IRLR8743PBF MOSFET 1 N-channel 135 W DPAK
C(ISS): 4880 pF; C(ISS) reference voltage: 15 V; Cut-off voltage U(DSS): 30 V; Enclosure type (semiconductors): DPAK; I(d): 160 A; Manufacturer code (components): INF; Mounting type: Surface-mount; No. of channels: 1; Operating temperature (max.): +175...
Infineon Technologies IRLU024NPBF MOSFET 1 HEXFET 45 W I-PAK
C(ISS): 480 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 55 V; Enclosure type (semiconductors): I-PAK; I(d): 17 A; Manufacturer code (components): INF; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): +175...
Infineon Technologies IRLU024NPBF MOSFET 1 N-channel 45 W TO 251 3
C(ISS): 480 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 55 V; Enclosure type (semiconductors): TO 251 3 ; Manufacturer code (components): INF; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): +175 °C; Operating...