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Image of STMicroelectronics TVS diode 1.5KE39A DO 201 37.1 V 1.5 kW
 

STMicroelectronics TVS diode 1.5KE39A DO 201 37.1 V 1.5 kW

Breakdown voltage U(BR): 37.1 V; Diode capacitance C(D): 2400 pF; Enclosure type (semiconductors): DO 201; Manufacturer code (components): STM; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): +175 °C; Peak current I(pp):...


 
Image of STMicroelectronics TVS diode 1N5908 DO 201AD 6 V 1.5 kW
 

STMicroelectronics TVS diode 1N5908 DO 201AD 6 V 1.5 kW

For protection of valuable digital and hybrid switches and microprocessors and data lines from overvoltage pulses (uni or bi-directional).This text is machine translated.


 
Image of STMicroelectronics TVS diode ESDA5V3SC5 SOT 23 5L 5.3 V 500 W
 

STMicroelectronics TVS diode ESDA5V3SC5 SOT 23 5L 5.3 V 500 W

Breakdown voltage U(BR): 5.3 V; Diode capacitance C(D): 320 pF; Enclosure type (semiconductors): SOT 23 5L; Manufacturer code (components): STM; Mounting type: Surface-mount; No. of channels: 4; Operating temperature (max.): +125 °C; Operating temperature...


 
Image of STMicroelectronics TVS diode ESDA6V1L SOT 23-3 6.1 V 300 W
 

STMicroelectronics TVS diode ESDA6V1L SOT 23-3 6.1 V 300 W

Breakdown voltage U(BR): 6.1 V; Diode capacitance C(D): 140 pF; Enclosure type (semiconductors): SOT 23-3; Manufacturer code (components): STM; Mounting type: Surface-mount; No. of channels: 2; Operating temperature (max.): +125 °C; Operating temperature...


 
Image of STMicroelectronics TVS diode ESDA6V1U1RL SOIC 8 6.1 V 200 W
 

STMicroelectronics TVS diode ESDA6V1U1RL SOIC 8 6.1 V 200 W

Breakdown voltage U(BR): 6.1 V; Diode capacitance C(D): 100 pF; Enclosure type (semiconductors): SOIC 8; Manufacturer code (components): STM; Mounting type: Surface-mount; No. of channels: 6; Operating temperature (max.): +125 °C; Polarity: Unidirectional;...


 
Image of STMicroelectronics TVS diode SM15T10AY DO 214AB 9.5 V 1.5 kW
 

STMicroelectronics TVS diode SM15T10AY DO 214AB 9.5 V 1.5 kW

Breakdown voltage U(BR): 9.5 V; Enclosure type (semiconductors): DO 214AB; Manufacturer code (components): STM; Mounting type: Surface-mount; No. of channels: 1; Operating temperature (max.): +150 °C; Operating temperature (min.) (num): -40 °C; Peak...


 
Image of STMicroelectronics TVS diode SM6T12A DO 214AA 11.4 V 600 W
 

STMicroelectronics TVS diode SM6T12A DO 214AA 11.4 V 600 W

Breakdown voltage U(BR): 11.4 V; Enclosure type (semiconductors): DO 214AA; Manufacturer code (components): STM; Mounting type: Surface-mount; No. of channels: 1; Operating temperature (max.): +150 °C; Operating temperature (min.) (num): -55 °C; Peak...


 
Image of STMicroelectronics TVS diode SM6T15A DO 214AA 14.3 V 600 W
 

STMicroelectronics TVS diode SM6T15A DO 214AA 14.3 V 600 W

Breakdown voltage U(BR): 14.3 V; Enclosure type (semiconductors): DO 214AA; Manufacturer code (components): STM; Mounting type: Surface-mount; No. of channels: 1; Operating temperature (max.): +150 °C; Operating temperature (min.) (num): -55 °C; Peak...


 
Image of STMicroelectronics TVS diode SM6T15CA DO 214AA 14.3 V 600 W
 

STMicroelectronics TVS diode SM6T15CA DO 214AA 14.3 V 600 W

Breakdown voltage U(BR): 14.3 V; Enclosure type (semiconductors): DO 214AA; Manufacturer code (components): STM; Mounting type: Surface-mount; No. of channels: 1; Operating temperature (max.): +150 °C; Operating temperature (min.) (num): -55 °C; Peak...


 
Image of STMicroelectronics TVS diode SM6T18CA DO 214AA 17.1 V 600 W
 

STMicroelectronics TVS diode SM6T18CA DO 214AA 17.1 V 600 W

Breakdown voltage U(BR): 17.1 V; Enclosure type (semiconductors): DO 214AA; Manufacturer code (components): STM; Mounting type: Surface-mount; No. of channels: 1; Operating temperature (max.): +150 °C; Operating temperature (min.) (num): -55 °C; Peak...