STMicroelectronics Transistor (BJT) - Discrete TIP3055 TO 247 3 No. of channels 1 NPN
Collector current: 15 A; Collector cutoff current: 700 µA; Collector emitter voltage U(CEO): 60 V; Collector-emitter saturation voltage (max.): 3 V; DC current gain (hFE): 20; DC current gain hFE - reference current: 4 A; DC current gain hFE - reference...
STMicroelectronics Transistor (BJT) - Discrete TIP31C TO 220AB No. of channels 1 NPN
Collector current: 3 A; Collector cutoff current: 300 µA; Collector emitter voltage U(CEO): 100 V; Collector-emitter saturation voltage (max.): 1.2 V; DC current gain (hFE): 10; DC current gain hFE - reference current: 3 A; DC current gain hFE - reference...
STMicroelectronics Transistor (BJT) - Discrete TIP32C TO 220AB No. of channels 1 PNP
Collector current: -3 A; Collector cutoff current: -300 µA; Collector emitter voltage U(CEO): -100 V; Collector-emitter saturation voltage (max.): -1.2 V; DC current gain (hFE): 10; DC current gain hFE - reference current: -3 A; DC current gain hFE -...
STMicroelectronics Transistor (BJT) - Discrete TIP36C TO 247 3 No. of channels 1 PNP
Collector current: -25 A; Collector cutoff current: -1 mA; Collector emitter voltage U(CEO): -100 V; Collector-emitter saturation voltage (max.): -4 V; DC current gain (hFE): 10; DC current gain hFE - reference current: -15 A; DC current gain hFE - reference...
STMicroelectronics TS912ID Linear IC - Op-amp Multi-purpose SO 8
Integrated circuits from leading manufacturers. Please read our extensive documentation which is free to download.
STMicroelectronics TS912IDT Linear IC - Op-amp Multi-purpose SO 8
Integrated circuits from leading manufacturers. Please read our extensive documentation which is free to download.
STMicroelectronics TS914IDT Linear IC - Op-amp Multi-purpose SO 14
Integrated circuits from leading manufacturers. Please read our extensive documentation which is free to download.
STMicroelectronics TVS diode 1.5KE15A DO 201 14.3 V 1.5 kW
Breakdown voltage U(BR): 14.3 V; Diode capacitance C(D): 5000 pF; Enclosure type (semiconductors): DO 201; Manufacturer code (components): STM; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): +175 °C; Peak current I(pp):...
STMicroelectronics TVS diode 1.5KE200A DO 201 190 V 1.5 kW
Breakdown voltage U(BR): 190 V; Diode capacitance C(D): 675 pF; Enclosure type (semiconductors): DO 201; Manufacturer code (components): STM; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): +175 °C; Peak current I(pp):...