Infineon Technologies IRFR3607PBF-GURT MOSFET 1 N-channel 140 W TO 252AA
Cut-off voltage U(DSS): 75 V; Enclosure type (semiconductors): TO 252AA; I(d): 56 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 140 W; R(DS)(on): 0.009 Ω; Type (transistors): N-channel
Infineon Technologies IRFR3710ZPBF-GURT MOSFET 1 N-channel 140 W TO 252AA
Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): TO 252AA; I(d): 42 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 140 W; R(DS)(on): 0.018 Ω; Type (transistors): N-channel
Infineon Technologies IRFR3806PBF-GURT MOSFET 1 N-channel 71 W TO 252AA
Cut-off voltage U(DSS): 60 V; Enclosure type (semiconductors): TO 252AA; I(d): 43 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 71 W; R(DS)(on): 0.0158 Ω; Type (transistors): N-channel
Infineon Technologies IRFR4105ZPBF-GURT MOSFET 1 N-channel 48 W TO 252AA
Cut-off voltage U(DSS): 55 V; Enclosure type (semiconductors): TO 252AA; I(d): 30 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 48 W; R(DS)(on): 0.0245 Ω; Type (transistors): N-channel
Infineon Technologies IRFR4510PBF-GURT MOSFET 1 N-channel 143 W TO 252AA
Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): TO 252AA; I(d): 56 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 143 W; R(DS)(on): 0.0139 Ω; Type (transistors): N-channel
Infineon Technologies IRFR4620PBF-GURT MOSFET 1 N-channel 144 W TO 252AA
Cut-off voltage U(DSS): 200 V; Enclosure type (semiconductors): TO 252AA; I(d): 24 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 144 W; R(DS)(on): 0.078 Ω; Type (transistors): N-channel
Infineon Technologies IRFR5305PBF-GURT MOSFET 1 P-channel 110 W TO 252AA
Cut-off voltage U(DSS): -55 V; Enclosure type (semiconductors): TO 252AA; I(d): -31 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 110 W; R(DS)(on): 0.065 Ω; Type (transistors): P-channel
Infineon Technologies IRFR5505PBF-GURT MOSFET 1 P-channel 66 W TO 252AA
Cut-off voltage U(DSS): -100 V; Enclosure type (semiconductors): TO 252AA; I(d): -13 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 66 W; R(DS)(on): 0.205 Ω; Type (transistors): P-channel
Infineon Technologies IRFR7546PBF-GURT MOSFET 1 N-channel 99 W TO 252AA
Cut-off voltage U(DSS): 60 V; Enclosure type (semiconductors): TO 252AA; I(d): 56 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 99 W; R(DS)(on): 0.0085 Ω; Type (transistors): N-channel
Infineon Technologies IRFR9024NPBF-GURT MOSFET 1 P-channel 38 W TO 252AA
Cut-off voltage U(DSS): -55 V; Enclosure type (semiconductors): TO 252AA; I(d): -11 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 38 W; R(DS)(on): 0.175 Ω; Type (transistors): P-channel