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Image of Infineon Technologies IRFI840GPBF MOSFET 1 N-channel 40 W TO 220
 

Infineon Technologies IRFI840GPBF MOSFET 1 N-channel 40 W TO 220

C(ISS): 1300 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 500 V; Enclosure type (semiconductors): TO 220; I(d): 4.6 A; Manufacturer code (components): INF; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): +150...


 
Image of Infineon Technologies IRFL014NPBF-GURT MOSFET 1 N-channel 2.1 W SOT 223
 

Infineon Technologies IRFL014NPBF-GURT MOSFET 1 N-channel 2.1 W SOT 223

Cut-off voltage U(DSS): 55 V; Enclosure type (semiconductors): SOT 223; I(d): 2.70 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 2.1 W; R(DS)(on): 0.16 Ω; Type (transistors): N-channel


 
Image of Infineon Technologies IRFL4105PBF-GURT MOSFET 1 N-channel 2.1 W SOT 223
 

Infineon Technologies IRFL4105PBF-GURT MOSFET 1 N-channel 2.1 W SOT 223

Cut-off voltage U(DSS): 55 V; Enclosure type (semiconductors): SOT 223; I(d): 5.2 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 2.1 W; R(DS)(on): 0.045 Ω; Type (transistors): N-channel


 
Image of Infineon Technologies IRFL4310PBF-GURT MOSFET 1 N-channel 2.1 W SOT 223
 

Infineon Technologies IRFL4310PBF-GURT MOSFET 1 N-channel 2.1 W SOT 223

Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): SOT 223; I(d): 2.20 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 2.1 W; R(DS)(on): 0.2 Ω; Type (transistors): N-channel


 
Image of Infineon Technologies IRFML8244TRPBF MOSFET 1 N-channel 1.25 W SOT 23
 

Infineon Technologies IRFML8244TRPBF MOSFET 1 N-channel 1.25 W SOT 23

C(ISS): 430 pF; C(ISS) reference voltage: 10 V; Cut-off voltage U(DSS): 25 V; Enclosure type (semiconductors): SOT 23; I(d): 5.8 A; Manufacturer code (components): INF; Mounting type: Surface-mount; No. of channels: 1; Operating temperature (max.): +150...


 
Image of Infineon Technologies IRFP054NPBF MOSFET 1 N-channel 170 W TO 247AC
 

Infineon Technologies IRFP054NPBF MOSFET 1 N-channel 170 W TO 247AC

Cut-off voltage U(DSS): 55 V; Enclosure type (semiconductors): TO 247AC; I(d): 81 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 170 W; R(DS)(on): 0.012 Ω; Type (transistors): N-channel


 
Image of Infineon Technologies IRFP064NPBF MOSFET 1 N-channel 200 W TO 247
 

Infineon Technologies IRFP064NPBF MOSFET 1 N-channel 200 W TO 247

A MOSFET transistor is a voltage controlled component and can be directly connected to high-resistance sources. It is, therefore, suited for use as a switch or an analogue amplifier. This transistor is µC, TTL and CMOS compatible. Note: manufacturer...


 
Image of Infineon Technologies IRFP140NPBF MOSFET 1 N-channel 140 W TO 247 3
 

Infineon Technologies IRFP140NPBF MOSFET 1 N-channel 140 W TO 247 3

C(ISS): 1400 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): TO 247 3; I(d): 33 A; Manufacturer code (components): INF; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.):...


 
Image of Infineon Technologies IRFP150NPBF MOSFET 1 N-channel 160 W TO 247 3
 

Infineon Technologies IRFP150NPBF MOSFET 1 N-channel 160 W TO 247 3

A MOSFET transistor is a voltage controlled component and can be directly connected to high-resistance sources. It is, therefore, suited for use as a switch or an analogue amplifier. This transistor is µC, TTL and CMOS compatible. Note: manufacturer...


 
Image of Infineon Technologies IRFP250NPBF MOSFET 1 N-channel 214 W TO 247
 

Infineon Technologies IRFP250NPBF MOSFET 1 N-channel 214 W TO 247

C(ISS): 2159 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 200 V; Enclosure type (semiconductors): TO 247; I(d): 30 A; Manufacturer code (components): INF; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): +175...