Infineon Technologies IRF640NPBF MOSFET 1 N-channel 150 W TO 220
A MOSFET transistor is a voltage controlled component and can be directly connected to high-resistance sources. It is, therefore, suited for use as a switch or an analogue amplifier. This transistor is µC, TTL and CMOS compatible. Note: manufacturer...
Infineon Technologies IRF640NSPBF-GURT MOSFET 1 N-channel 150 W D2PAK
Cut-off voltage U(DSS): 200 V; Enclosure type (semiconductors): D2PAK; I(d): 18 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 150 W; R(DS)(on): 0.15 Ω; Type (transistors): N-channel
Infineon Technologies IRF7103PBF-GURT MOSFET 2 N-channel 2.0 W SO 8
Enclosure type (semiconductors): SO 8; Mounting type: Surface-mount; No. of channels: 2; Power (max) P(TOT): 2.0 W; R(DS)(on): 0.2 Ω; Type (transistors): N-channel
Infineon Technologies IRF7201PBF-GURT MOSFET 1 N-channel 2.5 W SO 8
Cut-off voltage U(DSS): 30 V; Enclosure type (semiconductors): SO 8; I(d): 7.3 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 2.5 W; R(DS)(on): 0.05 Ω; Type (transistors): N-channel
Infineon Technologies IRF7205PBF-GURT MOSFET 1 P-channel 2.5 W SO 8
Cut-off voltage U(DSS): -30 V; Enclosure type (semiconductors): SO 8; I(d): -4.6 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 2.5 W; R(DS)(on): 0.07 Ω; Type (transistors): P-channel
Infineon Technologies IRF7241PBF-GURT MOSFET 1 P-channel 2.5 W SO 8
Cut-off voltage U(DSS): -40 V; Enclosure type (semiconductors): SO 8; I(d): -6.2 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 2.5 W; R(DS)(on): 0.041 Ω; Type (transistors): P-channel
Infineon Technologies IRF7303PBF-GURT MOSFET 2 N-channel 2.0 W SO 8
Enclosure type (semiconductors): SO 8; Mounting type: Surface-mount; No. of channels: 2; Power (max) P(TOT): 2.0 W; R(DS)(on): 0.08 Ω; Type (transistors): N-channel
Infineon Technologies IRF7306PBF-GURT MOSFET 2 P-channel 2.0 W SO 8
Enclosure type (semiconductors): SO 8; Mounting type: Surface-mount; No. of channels: 2; Power (max) P(TOT): 2.0 W; R(DS)(on): 0.16 Ω; Type (transistors): P-channel
Infineon Technologies IRF7309PBF-GURT MOSFET 2 N-channel , P-channel 1.4 W SO 8
Cut-off voltage U(DSS): 30 V; Enclosure type (semiconductors): SO 8; I(d): 4 A; Mounting type: Surface-mount; No. of channels: 2; Power (max) P(TOT): 1.4 W; R(DS)(on): 0.16 Ω; Type (transistors): N-channel , P-channel
Infineon Technologies IRF7313PBF-GURT MOSFET 2 N-channel 2.0 W SO 8
Enclosure type (semiconductors): SO 8; Mounting type: Surface-mount; No. of channels: 2; Power (max) P(TOT): 2.0 W; R(DS)(on): 0.046 Ω; Type (transistors): N-channel