Infineon Technologies IRF3205PBF MOSFET 1 N-channel 200 W TO 220AB
Cut-off voltage U(DSS): 55 V; Enclosure type (semiconductors): TO 220AB; I(d): 110 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 200 W; R(DS)(on): 0.008 Ω; Type (transistors): N-channel
Infineon Technologies IRF3205SPBF-GURT MOSFET 1 N-channel 200 W D2PAK
Cut-off voltage U(DSS): 55 V; Enclosure type (semiconductors): D2PAK; I(d): 110 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 200 W; R(DS)(on): 0.008 Ω; Type (transistors): N-channel
Infineon Technologies IRF3205ZPBF MOSFET 1 N-channel 170 W TO 220AB
C(ISS): 3450 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 55 V; Enclosure type (semiconductors): TO 220AB; I(d): 75 A; Manufacturer code (components): INF; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): +175...
Infineon Technologies IRF3205ZSPBF-GURT MOSFET 1 N-channel 170 W D2PAK
Cut-off voltage U(DSS): 55 V; Enclosure type (semiconductors): D2PAK; I(d): 75 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 170 W; R(DS)(on): 0.0065 Ω; Type (transistors): N-channel
Infineon Technologies IRF3415SPBF-GURT MOSFET 1 N-channel 200 W D2PAK
Cut-off voltage U(DSS): 150 V; Enclosure type (semiconductors): D2PAK; I(d): 43 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 200 W; R(DS)(on): 0.042 Ω; Type (transistors): N-channel
Infineon Technologies IRF3709ZPBF MOSFET 1 N-channel 79 W TO 220AB
C(ISS): 2130 pF; C(ISS) reference voltage: 15 V; Cut-off voltage U(DSS): 30 V; Enclosure type (semiconductors): TO 220AB; I(d): 87 A; Manufacturer code (components): INF; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): +175...
Infineon Technologies IRF3710 MOSFET 1 N-channel 160 W TO 220AB
A MOSFET transistor is a voltage controlled component and can be directly connected to high-resistance sources. It is, therefore, suited for use as a switch or an analogue amplifier. This transistor is µC, TTL and CMOS compatible. Note: manufacturer...
Infineon Technologies IRF3710PBF MOSFET 1 N-channel 200 W TO 220AB
Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): TO 220AB; I(d): 57 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 200 W; R(DS)(on): 0.023 Ω; Type (transistors): N-channel
Infineon Technologies IRF3710SPBF-GURT MOSFET 1 N-channel 200 W D2PAK
Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): D2PAK; I(d): 57 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 200 W; R(DS)(on): 0.023 Ω; Type (transistors): N-channel
Infineon Technologies IRF3710SPBF MOSFET 1 N-channel 200 W D2PAK
C(ISS): 3130 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): D2PAK; I(d): 57 A; Manufacturer code (components): INF; Mounting type: Surface-mount; No. of channels: 1; Operating temperature (max.): +175...