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Image of Infineon Technologies IR2153PBF PMIC - gate drivers RC circuit Half-bridge DIP 8
 

Infineon Technologies IR2153PBF PMIC - gate drivers RC circuit Half-bridge DIP 8

Integrated circuits from leading manufacturers. Please read our extensive documentation which is free to download.


 
Image of Infineon Technologies IR2153SPBF PMIC - gate drivers SOIC 8 Tube
 

Infineon Technologies IR2153SPBF PMIC - gate drivers SOIC 8 Tube

Integrated circuits from leading manufacturers. Please read our extensive documentation which is free to download.


 
Image of Infineon Technologies IR2183SPBF IGBT 2 SOIC 8
 

Infineon Technologies IR2183SPBF IGBT 2 SOIC 8

Additional technical information: Supply voltage, min. 10 V; Supply voltage, max.: 20 V; Enclosure type (semiconductors): SOIC 8; Mounting type: Surface-mount; No. of channels: 2; Operating temperature (max.): +125 °C; Operating temperature (min.) (num):...


 
Image of Infineon Technologies IR2184SPBF IGBT 2 SOIC 8
 

Infineon Technologies IR2184SPBF IGBT 2 SOIC 8

Additional technical information: Supply voltage, min. 10 V; Supply voltage, max.: 20 V; Enclosure type (semiconductors): SOIC 8; Mounting type: Surface-mount; No. of channels: 2; Operating temperature (max.): +125 °C; Operating temperature (min.) (num):...


 
Image of Infineon Technologies IRF1010E MOSFET 1 N-channel 200 W TO 220
 

Infineon Technologies IRF1010E MOSFET 1 N-channel 200 W TO 220

C(ISS): 3210 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 60 V; Enclosure type (semiconductors): TO 220; I(d): 84 A; Manufacturer code (components): INF; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): +175...


 
Image of Infineon Technologies IRF1010NPBF MOSFET 1 N-channel 180 W TO 220
 

Infineon Technologies IRF1010NPBF MOSFET 1 N-channel 180 W TO 220

A MOSFET transistor is a voltage controlled component and can be directly connected to high-resistance sources. It is, therefore, suited for use as a switch or an analogue amplifier. This transistor is µC, TTL and CMOS compatible. Note: manufacturer...


 
Image of Infineon Technologies IRF1010NPBF MOSFET 1 N-channel 180 W TO 220AB
 

Infineon Technologies IRF1010NPBF MOSFET 1 N-channel 180 W TO 220AB

C(ISS): 3210 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 55 V; Enclosure type (semiconductors): TO 220AB; I(d): 85 A; Manufacturer code (components): INF; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): +175...


 
Image of Infineon Technologies IRF1010ZPBF MOSFET 1 N-channel 140 W TO 220AB
 

Infineon Technologies IRF1010ZPBF MOSFET 1 N-channel 140 W TO 220AB

C(ISS): 2840 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 55 V; Enclosure type (semiconductors): TO 220AB; I(d): 75 A; Manufacturer code (components): INF; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): +175...


 
Image of Infineon Technologies IRF1018EPBF MOSFET 1 N-channel 110 W TO 220AB
 

Infineon Technologies IRF1018EPBF MOSFET 1 N-channel 110 W TO 220AB

C(ISS): 2290 pF; C(ISS) reference voltage: 50 V; Cut-off voltage U(DSS): 60 V; Enclosure type (semiconductors): TO 220AB; I(d): 79 A; Manufacturer code (components): INF; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): +175...


 
Image of Infineon Technologies IRF1018ESPBF-GURT MOSFET 1 N-channel 110 W D2PAK
 

Infineon Technologies IRF1018ESPBF-GURT MOSFET 1 N-channel 110 W D2PAK

Cut-off voltage U(DSS): 60 V; Enclosure type (semiconductors): D2PAK; I(d): 79 A; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 110 W; R(DS)(on): 0.0084 Ω; Type (transistors): N-channel