Additional technical information: (UGE(th)) Gate emitter threshold voltage 5.1 V; (ICpulse) Pulsed collector current: 160 A.; Collector current: 80 A; Collector emitter reverse voltage U(CES): 600 V; Enclosure type (semiconductors): TO 247; Mounting type:...
Additional technical information: (UGE(th)) Gate emitter threshold voltage 5.8 V; (ICpulse) Pulsed collector current: 60 A.; Collector current: 30 A; Collector emitter reverse voltage U(CES): 1200 V; Enclosure type (semiconductors): TO 247; Mounting type:...
Additional technical information: (UGE(th)) Gate emitter threshold voltage 5.8 V; (ICpulse) Pulsed collector current: 100 A.; Collector current: 50 A; Collector emitter reverse voltage U(CES): 1200 V; Enclosure type (semiconductors): TO 247; Mounting...
Integrated circuits from leading manufacturers. Please read our extensive documentation which is free to download.
Cut-off voltage U(DSS): 600 V; Enclosure type (semiconductors): TO 247; I(d): 77.5 A; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 481 W; R(DS)(on): 0.041 Ω; Type (transistors): N-channel
Integrated circuits from leading manufacturers. Please read our extensive documentation which is free to download.
Integrated circuits from leading manufacturers. Please read our extensive documentation which is free to download.
Additional technical information: Supply voltage, min. 10 V; Supply voltage, max.: 20 V; Enclosure type (semiconductors): SOIC 8; Mounting type: Surface-mount; No. of channels: 2; Operating temperature (max.): +125 °C; Operating temperature (min.) (num):...
Integrated circuits from leading manufacturers. Please read our extensive documentation which is free to download.
Integrated circuits from leading manufacturers. Please read our extensive documentation which is free to download.