STMicroelectronics Transistor (BJT) - Discrete BDX33C TO 220AB No. of channels 1 NPN - Darlington

Collector current: 10 A; Collector cutoff current: 500 µA; Collector emitter voltage U(CEO): 100 V; Collector-emitter saturation voltage (max.): 2.5 V; DC current gain (hFE): 750; DC current gain hFE - reference current: 3 A; DC current gain hFE - reference voltage: 3 V; Enclosure type (semiconductors): TO 220AB; Manufacturer code (components): STM; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 70 W; Type (transistors): NPN - Darlington

Price: 0.79 from Conrad Electronic