STMicroelectronics Transistor (BJT) - Discrete BD911 TO 220AB No. of channels 1 NPN

Collector current: 15 A; Collector cutoff current: 1 mA; Collector emitter voltage U(CEO): 100 V; Collector-emitter saturation voltage (max.): 3 V; DC current gain (hFE): 15; DC current gain hFE - reference current: 5 A; DC current gain hFE - reference voltage: 4 V; Enclosure type (semiconductors): TO 220AB; Manufacturer code (components): STM; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 90 W; Transit frequency f(T): 3 MHz; Type (transistors): NPN

Price: 1.49 from Conrad Electronic