STMicroelectronics Transistor (BJT) - Discrete BD239C TO 220 No. of channels 1 NPN

Collector current: 2 A; Collector cutoff current: 300 µA; Collector emitter voltage U(CEO): 100 V; Collector-emitter saturation voltage (max.): 700 mV; DC current gain (hFE): 15; DC current gain hFE - reference current: 1 A; DC current gain hFE - reference voltage: 4 V; Enclosure type (semiconductors): TO 220; Manufacturer code (components): STM; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 2 W; Type (transistors): NPN

Price: 0.62 from Conrad Electronic