STMicroelectronics Transistor (BJT) - Discrete BD135 SOT 32 No. of channels 1 NPN

Collector current: 1.5 A; Collector cutoff current: 100 nA; Collector emitter voltage U(CEO): 45 V; Collector-emitter saturation voltage (max.): 500 mV; DC current gain (hFE): 40; DC current gain hFE - reference current: 150 mA; DC current gain hFE - reference voltage: 2 V; Enclosure type (semiconductors): SOT 32; Manufacturer code (components): STM; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 1.25 W; Type (transistors): NPN

Price: 0.36 from Conrad Electronic