ON Semiconductor Transistor (BJT) - Discrete MJE18004G TO 220AB No. of channels 1 NPN

Collector current: 5 A; Collector cutoff current: 100 µA; Collector emitter voltage U(CEO): 450 V; Collector-emitter saturation voltage (max.): 750 mV; DC current gain (hFE): 14; DC current gain hFE - reference current: 300 mA; DC current gain hFE - reference voltage: 5 V; Enclosure type (semiconductors): TO 220AB; Manufacturer code (components): OnS; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 75 W; Series (semiconductors): SWITCHMODE™; Transit frequency f(T): 13 MHz; Type (transistors): NPN

Price: 2.29 from Conrad Electronic