ON Semiconductor NDT2955 MOSFET 1 P-channel 1.1 W SOT 223 4

C(ISS): 601 pF; C(ISS) reference voltage: 30 V; Cut-off voltage U(DSS): 60 V; Enclosure type (semiconductors): SOT 223 4; I(d): 2.5 A; Manufacturer code (components): OnS; Mounting type: Surface-mount; No. of channels: 1; Operating temperature (max.): +150 °C; Operating temperature (min.) (num): -55 °C; Power (max) P(TOT): 1.1 W; Q(G): 15 nC; Q(G) reference voltage: 10 V; R(DS)(on): 300 mΩ; R(DS)(on) reference current: 2.5 A; R(DS)(on) reference voltage: 10 V; Transistor property: Standard; Type (transistors): P-channel ; U(DSS): 60 V; U(GS)(th) max.: 4 V; U(GS)(th) reference current (max.): 250 µA

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