ON Semiconductor BSS123 MOSFET 1 N-channel 360 mW SOT 23-3

C(ISS): 73 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 100 V; Enclosure type (semiconductors): SOT 23-3; I(d): 170 mA; Manufacturer code (components): OnS; Mounting type: Surface-mount; No. of channels: 1; Operating temperature (max.): +150 °C; Operating temperature (min.) (num): -55 °C; Power (max) P(TOT): 360 mW; Q(G): 2.5 nC; Q(G) reference voltage: 10 V; R(DS)(on): 6 Ω; R(DS)(on) reference current: 170 mA; R(DS)(on) reference voltage: 10 V; Transistor property: Logic level gate; Type (transistors): N-channel ; U(DSS): 100 V; U(GS)(th) max.: 2 V; U(GS)(th) reference current (max.): 1 mA

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