Diotec Transistor (BJT) - Discrete BC817-25W SOT 323 NPN

Additional technical information: Type SMDSOT-323 housingCollector emitter voltage - VCEO 45 VDC collector current - IC: 500 mAPolarity - pin: NPNJunction temperature - Tjmax 150 °CPower loss - Ptot 0,200 W.Collector base current ratio - hfe: 250VCE 1 VIC 100 mACollector saturation voltage - VCEsat 700 mVIC 500 mAIB 50 mATransit frequency - ft:100 MHzIC 10 mAVCE 5 VF 50 MHz; Collector current: 500 mA; Collector emitter voltage U(CEO): 45 V; Collector-emitter saturation voltage (max.): 700 mV; DC current gain (hFE): 250; Enclosure type (semiconductors): SOT 323; Mounting type: Surface-mount; Power (max) P(TOT): 0.2 W; Transit frequency f(T): 50 MHz; Type (transistors): NPN

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